Title :
Trends and limits in monolithic integration by increasing the die area
Author :
Warwick, Colin A. ; Ourmazd, Abbas
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
The authors consider the limits on growing the die area, and argue that they are essentially economic. The discussion is in terms of a simple system-cost model. At a given defect density, the optimum die area is determined by the balance between reducing the assembly cost, achieved by growing the die to bring interconnects on chip, and reducing the scrapping cost, achieved by shrinking the die to reduce the amount of processed Si lost every time defects occur. The author´s model accurately reproduces past trends, and predicts the die area which minimizes the cost of a system of given complexity. Extrapolation of present trends indicates that the economic advantage of growing the die may be exhausted at die areas of ~8-20 cm2. Dice with such an area may be encountered by the year 2010, when fundamental limits on miniaturization are also anticipated
Keywords :
integrated circuit technology; microassembling; monolithic integrated circuits; assembly cost; defect density; die area; economic advantage; miniaturization; monolithic integration; scrapping cost; system-cost model; Area measurement; Breakdown voltage; Doping profiles; Electric breakdown; Implants; Metalworking machines; Monolithic integrated circuits; Process design; Semiconductor diodes; Voltage measurement;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on