Title :
Redistribution of chromium in semi-insulating GaAs:Cr during laser annealing
Author :
Badawi, M.H. ; Sealy, B.J. ; Clegg, J.B.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
Secondary ion mass spectrometry (s.i.m.s.) measurements on laser irradiated Cr-doped (semi-insulating) GaAs samples revealed a Cr redistribution effect near the surface region. The maximum depth at which redistribution is measured is shown to increase with increasing energy density from a Q-switched ruby laser, reaching a depth of ~1.4 ¿m for an energy density of 1.4 J/cm2. The redistribution is explained in terms of a zone refining process which occurs during the cooling cycle of the laser induced melted region.
Keywords :
III-V semiconductors; annealing; chromium; gallium arsenide; impurity distribution; laser beam effects; Cr doped; Cr redistribution effect; GaAs:Cr; Q-switched ruby laser; cooling cycle; energy density; laser annealing; laser induced melted region; secondary ion mass spectrometry measurements; surface region; zone refining process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800385
