• DocumentCode
    956900
  • Title

    Evidence for alloy scattering from pressure-induced changes of electron mobility in In1¿xGaxAsyP1¿y

  • Author

    Adams, A.R. ; Tatham, H.L. ; Hayes, J.R. ; El-Sabbahy, A.N. ; Greene, P.D.

  • Author_Institution
    University of Surrey, Department of Physics, Guildford, UK
  • Volume
    16
  • Issue
    14
  • fYear
    1980
  • Firstpage
    560
  • Lastpage
    562
  • Abstract
    The electron mobility in the quaternary alloy In1¿xGaxAsyP1¿y has been measured at pressures up to 16 kbar which produce significant changes in the effective mass. Both the pressure dependence and the temperature dependence indicate that alloy scattering has a strong influence on the electron mobility.
  • Keywords
    III-V semiconductors; carrier mobility; effective mass (band structure); gallium arsenide; gallium compounds; indium compounds; piezoresistance; 16 kbar; In1-xGaxAsyP1-y; alloy scattering; effective mass; electron mobility; pressure dependence; pressure induced changes; quaternary alloy; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800389
  • Filename
    4244160
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956900