Title :
Electrical conduction in metal/implanted SiO2/Si structures
Author_Institution :
EFCIS, Direction de Recherche el D´eveloppement, Grenoble, France
Abstract :
Direct current/voltage relationships for m.o.s. capacitors are measured as function of oxide doping. Uniform P+ doping is obtained by means of multiple ion implantation. A close relationship between oxide defects, conduction and memory switching is then emphasised.
Keywords :
electrical conductivity transitions; ion implantation; metal-insulator-semiconductor structures; silicon; silicon compounds; MOS capacitors; P+ doping; current voltage relationships; electrical conduction; memory switching; metal/implanted SiO2/Si structures; multiple ion implantation; oxide defects; oxide doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800392
