Title :
InGaAsP/InP buried crescent laser emitting at 1.3 ¿m with very low threshold current
Author :
Murotani ; Oomura, E. ; Higuchi, H. ; Namizakj, H. ; Susaki, W.
Author_Institution :
Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
Abstract :
An InGaAsP/InP injection laser is described in which a crescent-shaped InGaAsP active region is completely embedded in InP by the etch-and-fill l.p.c. technique and a double current confinement scheme is incorporated with two reverse-biased p-n junctions on both sides of the active layer. The best laser has the very low threshold current of 28 mA c.w. at room temperature, and shows stable single-mode c.w. operation up to about twice the threshold current.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.3 microns; InGaAsP/InP buried crescent laser; active layer; double current confinement scheme; etch and fill LPE technique; injection laser; reverse biased p-n junctions; stable single mode CW operation; very low threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800393
