Title :
Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers
Author :
Smith, G.M. ; Forbes, D.V. ; Coleman, J.J. ; Verdeyen, J.T.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
The optical properties of strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers with a cavity comprised of a single cleaved facet and a dry etched corner reflector (CR) is described. For comparison, these data are contrasted with data for Fabry-Perot lasers made from the same material and having either two cleaved facets or one cleaved and one straight-etched facet. The etched CR exhibits higher overall reflectivity than the straight-etched and cleaved facet structures, resulting in lower threshold current density and higher efficiency. However, near-field measurements indicate that improvement in reflectivity from the etched CRs is offset by their tendency to favor off-order transverse modes.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser accessories; laser beams; laser cavity resonators; laser modes; semiconductor lasers; Fabry-Perot lasers; InGaAs-GaAs-AlGaAs; cavity; cleaved facet; dry etched corner reflector; near-field measurements; off-order transverse modes; optical properties; quantum-well lasers; reactive ion etched corner reflector; reflectivity; strained-layer laser; Chemical lasers; Chromium; Dry etching; Gallium arsenide; Ion beams; Laser modes; Optical reflection; Particle beam optics; Reflectivity; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
