• DocumentCode
    957046
  • Title

    CW operation of corner cavity semiconductor lasers

  • Author

    Smith, S.D. ; Fitz, J.L. ; Whisnant, J.K.

  • Author_Institution
    Lab. for Phys. Sci., College Park, MD, USA
  • Volume
    5
  • Issue
    8
  • fYear
    1993
  • Firstpage
    876
  • Lastpage
    879
  • Abstract
    Etched facet semiconductor lasers have been fabricated and tested under CW operating conditions. The lasers consist of stripes formed by proton implantation, a total internal reflection (TIR) corner, and an output coupling facet. Devices with a variety of output coupling geometries were fabricated. Laser threshold currents and spectral characteristics were measured. Threshold current levels of devices with several different aperture sizes are compared to those of structures with standard Fabry-Perot reflectors.<>
  • Keywords
    laser accessories; laser beams; laser cavity resonators; optical workshop techniques; semiconductor lasers; CW operation; corner cavity semiconductor lasers; etched facet lasers; laser threshold currents; output coupling facet; proton implantation; spectral characteristics; total internal reflection corner; Apertures; Current measurement; Etching; Geometrical optics; Optical coupling; Optical reflection; Protons; Semiconductor device testing; Semiconductor lasers; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.238240
  • Filename
    238240
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957046