• DocumentCode
    957054
  • Title

    Ideality and noise figure characteristics of r.f. sputtered millimetre GaAs diodes

  • Author

    Anand, Y. ; Christou, Alex ; Day, H.

  • Author_Institution
    Microwave Associates, Burlington, USA
  • Volume
    16
  • Issue
    15
  • fYear
    1980
  • Firstpage
    581
  • Lastpage
    583
  • Abstract
    Refractory Schottky barriers have been incorporated in millimetre GaAs mixer diodes to improve r.f. performance and burnout resistance. It is shown that low power r.f. sputter deposition of TiW and Ti-Mo refractories results in degradation of noise temperature ratio and to a first approximation does not affect d.c. parameters, especially the ideality factor.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; electron device noise; gallium arsenide; mixers (circuits); radiofrequency sputtering; solid-state microwave devices; DC parameters; RF sputtered millimetre GaAs diodes; Ti-Mo refractories; TiW; burnout resistance; ideality factor; microwave; mixer diodes; noise figure characteristics; noise temperature ratio; refractory Schottky barriers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800403
  • Filename
    4244175
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957054