Experimental Investigation of Pulsed-Laser-Annealed Ultralow-Conduction-Loss 600-V Nonpunchthrough Insulated-Gate Bipolar Transistors

Using a double-pulsed-laser-annealing process, an ultralow-conduction-loss 600-V nonpunchthrough (NPT) insulated-gate bipolar transistor (IGBT) is realized with a highly activated anode structure. This ultralow conduction loss has not been achievable prior to this due to the limited thermal budget in conventional annealing processes. The laser-annealed NPT IGBT demonstrates the ON-state voltage drop from 1.17 to 1.49 V at the collector current density of 165 A/cm², which implies that a wide range of tradeoff performance between the conduction and switching losses can be generated according to various requirements of applications. This brief presents the characteristics of the laser-annealed NPT IGBT, depending on the splits of laser-irradiation conditions, and the implications of the low thermal-budget annealing process.