Title :
2.4-μm-Cutoff AlGaAsSb/InGaAsSb Phototransistors for Shortwave-IR Applications
Author :
Refaat, Tamer F. ; Abedin, M. Nurul ; Sulima, Oleg V. ; Ismail, Syed ; Singh, Upendra N.
Author_Institution :
Old Dominion Univ., Norfolk
Abstract :
Shortwave-infrared (IR) detectors are critical for several applications, including remote sensing and optical communications. Several detectors are commercially available for this wavelength range, but they lack sufficient gain that limits their detectivity. The characterization results of AlGaAsSb/InGaAsSb phototransistors for shortwave-IR application are reported. The phototransistors are grown using molecular beam epitaxy technique. Spectral-response measurements showed a uniform responsivity between 1.2- and 2.4- region with a mean value of 1000 A/W. A maximum detectivity of was obtained at 2 at and 1.3 V.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; phototransistors; AlGaAsSb-InGaAsSb - Interface; molecular beam epitaxy technique; optical communications; phototransistors; remote sensing; shortwave-IR applications; shortwave-infrared detectors; size 2.4 mum; spectral-response measurements; voltage 1.3 V; wavelength 1.2 micron to 2.4 micron; Heterojunctions; Infrared detectors; Molecular beam epitaxial growth; NASA; Optical fiber communication; Phototransistors; Remote sensing; Signal to noise ratio; Temperature; Wavelength measurement; Characterization; heterojunction; infrared (IR); phototransistor;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.907145
