Title :
Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated waveguide lens for high-power applications
Author :
Koyama, F. ; Liou, K.Y. ; Dentai, A.G. ; Tanbun-Ek, T. ; Burrus, C.A.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
A 1.48- mu m tapered broad-area semiconductor laser amplifier with a monolithically integrated waveguide lens as demonstrated. The gain saturation characteristics of the tapered amplifier were examined. A maximum output power of 300 mW and a 3-dB saturation power of 200 mW under quasi-CW conditions were obtained from the amplifier without the waveguide lens. Output power of 200 mW was obtained with a broad emission spectrum of approximately 30 nm when the device was used as a superluminescent diode. The amplified output was focused to a single lobe by the monolithically integrated aspheric waveguide lens, which may be useful for efficient coupling of the output into a single-mode fiber.<>
Keywords :
III-V semiconductors; aspherical optics; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; lenses; light emitting diodes; optical waveguides; semiconductor lasers; superradiance; 1.48 micron; 200 mW; 300 mW; GaInAs-GaInAsP; IR; MQW laser amplifiers; amplified output; aspheric lenses; broad emission spectrum; efficient coupling; fibre coupling; gain saturation characteristics; high-power applications; laser output power; maximum output power; monolithically integrated; monolithically integrated waveguide lens; quasi-CW conditions; saturation power; semiconductor laser diodes; single lobe; superluminescent diode; tapered broad-area amplifiers; Lenses; Optical fiber devices; Power amplifiers; Power generation; Quantum well devices; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Superluminescent diodes; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
