Title :
GaAs-GaAlAs phototransistor/laser light amplifier
Author :
Beneking, H. ; Grote, N. ; Roth, W. ; Svilans, M.N.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
A hybrid light amplifier consisting of a GaAs-GaAlAs widegap phototransistor as light detector and a d.h. laser as light emitter has been realised. Amplification up to 25 dB has been achieved. Fastest turn-on and turn-off times were 16 ns and 24 ns, respectively. A monolithically integrated amplifier structure is proposed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; phototransistors; semiconductor junction lasers; DH laser; GaAs-GaAlAs phototransistor; hybrid light amplifier; laser light amplifier; light detector; monolithically integrated amplifier structure; widegap phototransistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800417
