DocumentCode
957192
Title
High-power ring laser using a broad-area GaAlAs amplifier
Author
Surette, Marc R. ; Goldberg, Lew ; Mehuys, David
Author_Institution
US Naval Res. Lab., Washington, DC, USA
Volume
5
Issue
8
fYear
1993
Firstpage
919
Lastpage
922
Abstract
A high-power external-cavity ring laser, incorporating a 600- mu m-wide GaAlAs traveling wave amplifier as a gain element, is demonstrated. The laser generated a pulsed (200 ns) output power of 9.3 W with a near-diffraction-limited beam quality and unidirectional ring propagation. The power versus output coupling dependence agreed with independently measured gain saturation characteristics of the amplifier.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser cavity resonators; ring lasers; semiconductor lasers; 200 ns; 600 micron; 9.3 W; GaAlAs; broad-area; gain element; gain saturation characteristics; high-power external-cavity ring laser; laser beams; near-diffraction-limited beam quality; output coupling dependence; pulsed output power; traveling wave amplifier; unidirectional ring propagation; High power amplifiers; Laser beams; Optical propagation; Optical pulse generation; Power amplifiers; Power generation; Power lasers; Power measurement; Pulse amplifiers; Ring lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.238254
Filename
238254
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