• DocumentCode
    957192
  • Title

    High-power ring laser using a broad-area GaAlAs amplifier

  • Author

    Surette, Marc R. ; Goldberg, Lew ; Mehuys, David

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • Volume
    5
  • Issue
    8
  • fYear
    1993
  • Firstpage
    919
  • Lastpage
    922
  • Abstract
    A high-power external-cavity ring laser, incorporating a 600- mu m-wide GaAlAs traveling wave amplifier as a gain element, is demonstrated. The laser generated a pulsed (200 ns) output power of 9.3 W with a near-diffraction-limited beam quality and unidirectional ring propagation. The power versus output coupling dependence agreed with independently measured gain saturation characteristics of the amplifier.<>
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser cavity resonators; ring lasers; semiconductor lasers; 200 ns; 600 micron; 9.3 W; GaAlAs; broad-area; gain element; gain saturation characteristics; high-power external-cavity ring laser; laser beams; near-diffraction-limited beam quality; output coupling dependence; pulsed output power; traveling wave amplifier; unidirectional ring propagation; High power amplifiers; Laser beams; Optical propagation; Optical pulse generation; Power amplifiers; Power generation; Power lasers; Power measurement; Pulse amplifiers; Ring lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.238254
  • Filename
    238254