Title :
A Compact Model for Polysilicon TFTs Leakage Current Including the Poole–Frenkel Effect
Author :
Wu, W.J. ; Yao, R.H. ; Li, S.H. ; Hu, Y.F. ; Deng, W.L. ; Zheng, X.R.
Author_Institution :
South China Univ. of Technol., Guangzhou
Abstract :
Based on a generation-recombination model including the Poole-Frenkel (PF) effect and phonon-assisted tunneling, numerical analysis shows that the logarithm of generation rate for polysilicon thin-film transistors (poly-Si TFTs) working in the leakage region is linear with the square root of lower electric field and approximately linear with higher electric field over a wide temperature range (273-423 K). Therefore, an analytical expression is found to approximate the generation rate. Furthermore, a compact model for poly-Si TFT leakage current including the PF effect is developed in this paper. The proposed model is analytical without numerical calculation, and its parameters can be extracted from experimental data; hence, it is attractive for circuit simulation. The model has been verified by comparing simulated results with experimental data.
Keywords :
Poole-Frenkel effect; leakage currents; phonons; thin film transistors; tunnelling; Poole-Frenkel effect; Si - Interface; generation-recombination model; leakage current; numerical analysis; phonon-assisted tunneling; polysilicon thin-film transistors; temperature 273 K to 423 K; Circuit simulation; Dielectric constant; Electron traps; Kelvin; Leakage current; Silicon; Temperature; Thin film transistors; Tunneling; Voltage; Compact model; leakage current; polysilicon thin-film transistors (poly-Si TFTs); the Poole–Frenkel (PF) effect;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.906968
