• DocumentCode
    957240
  • Title

    A Physical Model on Scattering at High-κ Dielectric/SiO2 Interface of SiGe p-MOSFETs

  • Author

    Zhang, X.F. ; Xu, J.P. ; Lai, P.T. ; Li, C.X.

  • Author_Institution
    Huazhong Univ. of Sci. & Technol., Wuhan
  • Volume
    54
  • Issue
    11
  • fYear
    2007
  • Firstpage
    3097
  • Lastpage
    3102
  • Abstract
    In this brief, a physical model describing the scattering of holes in the channel of SiGe p-MOSFET caused by roughness and charged defects at/near the high- K dielectric/SiO2 interface is proposed. Using the Fang-Howard´s variational wave function, the hole mobility is calculated with consideration of the above two scattering mechanisms. The effects of device parameters such as the thicknesses and permittivities of the high- dielectric and interlayer on the hole mobility are discussed.
  • Keywords
    Ge-Si alloys; MOSFET; high-k dielectric thin films; hole mobility; scattering; silicon compounds; SiGe - Interface; SiO2 - Interface; high-K dielectric/ SiO2 interface; hole mobility; p-MOSFET; scattering mechanisms; CMOS technology; Capacitance; Dielectric devices; Fluctuations; Germanium silicon alloys; MOSFET circuits; Permittivity; Scattering; Senior members; Silicon germanium; High-$kappa$ dielectric; MOSFET; SiGe; mobility; scattering;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2007.906957
  • Filename
    4367625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957240