DocumentCode
957276
Title
Low temperature thermal annealing of arsenic implanted silicon
Author
Scovell, P.D. ; Young, J.M.
Author_Institution
Standard Telecommunication Laboratories Limited, Harlow, UK
Volume
16
Issue
16
fYear
1980
Firstpage
614
Lastpage
615
Abstract
The annealing of heavily arsenic implanted (100) silicon using low temperature furnace techniques to obtain metastable concentrations of the dopant is described and the activations obtained are compared with those found after laser and electron beam annealing.
Keywords
annealing; arsenic; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; ion implantation; semiconductor doping; silicon; Si:As; activations; elemental semiconductor; low temperature furnace techniques; metastable concentrations; thermal annealing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800426
Filename
4244199
Link To Document