DocumentCode
957325
Title
Bandwidth limited picosecond optical pulse generation from actively mode-locked AlGaAs diode laser
Author
Ito, H. ; Yokoyama, Haruki ; Inaba, Hiromi
Author_Institution
Tohoku University, Research Institute of Electrical Communication, Sendai, Japan
Volume
16
Issue
16
fYear
1980
Firstpage
620
Lastpage
621
Abstract
A simple configuration made of a conventional AlGaAs diode laser without antireflection coating combined with an external reflector and an optical etalon was proved to be practically feasible to generate bandwidth limited mode-locked optical pulses of 30 ps duration by synchronous modulation at the external cavity mode interval. Generated optical pulse shape was found to be Lorentzian rather than Gaussian for the first time, based on the measurements of both the s.h.g. correlation method and the ultrafast streak camera.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; III-V semiconductors; Lorentzian pulses; external reflector; mode locked AlGaAs diode laser; optical etalon; optical pulse generation; synchronous modulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800430
Filename
4244203
Link To Document