Title :
Bandwidth limited picosecond optical pulse generation from actively mode-locked AlGaAs diode laser
Author :
Ito, H. ; Yokoyama, Haruki ; Inaba, Hiromi
Author_Institution :
Tohoku University, Research Institute of Electrical Communication, Sendai, Japan
Abstract :
A simple configuration made of a conventional AlGaAs diode laser without antireflection coating combined with an external reflector and an optical etalon was proved to be practically feasible to generate bandwidth limited mode-locked optical pulses of 30 ps duration by synchronous modulation at the external cavity mode interval. Generated optical pulse shape was found to be Lorentzian rather than Gaussian for the first time, based on the measurements of both the s.h.g. correlation method and the ultrafast streak camera.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; III-V semiconductors; Lorentzian pulses; external reflector; mode locked AlGaAs diode laser; optical etalon; optical pulse generation; synchronous modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800430
