• DocumentCode
    957364
  • Title

    Schottky barrier height of Au on n-type Ga1¿xAlxSb (0.0¿x¿0.65)

  • Author

    Chin, Richard ; Milano, R.A. ; Law, H.D.

  • Author_Institution
    Rockwell International, Electronics Research Center, Thousand Oaks, USA
  • Volume
    16
  • Issue
    16
  • fYear
    1980
  • Firstpage
    626
  • Lastpage
    627
  • Abstract
    The dependence of the barrier height ¿Bn of Au-Ga1¿xAlxSb Schottky barriers on x, the mole fraction of Al in the solid, has been measured. The data show that as x increases the values of ¿Bn also increase. However, the measured barrier heights do not agree with those predicted by the `common anion¿ rule. This result, coupled with other available data, indicates that the Au-Ga1¿xAlxSb hole Schottky barrier height (¿Bn) is not independent of the Ga/Al cation ratio.
  • Keywords
    III-V semiconductors; Schottky effect; aluminium compounds; gallium compounds; gold; semiconductor-metal boundaries; Au-Ga1-xAlxSb Schottky barrier; barrier height; mole fraction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800434
  • Filename
    4244207
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957364