Title :
Schottky barrier height of Au on n-type Ga1¿xAlxSb (0.0¿x¿0.65)
Author :
Chin, Richard ; Milano, R.A. ; Law, H.D.
Author_Institution :
Rockwell International, Electronics Research Center, Thousand Oaks, USA
Abstract :
The dependence of the barrier height ¿Bn of Au-Ga1¿xAlxSb Schottky barriers on x, the mole fraction of Al in the solid, has been measured. The data show that as x increases the values of ¿Bn also increase. However, the measured barrier heights do not agree with those predicted by the `common anion¿ rule. This result, coupled with other available data, indicates that the Au-Ga1¿xAlxSb hole Schottky barrier height (¿Bn) is not independent of the Ga/Al cation ratio.
Keywords :
III-V semiconductors; Schottky effect; aluminium compounds; gallium compounds; gold; semiconductor-metal boundaries; Au-Ga1-xAlxSb Schottky barrier; barrier height; mole fraction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800434