Title :
Quantum inversion layer mobility: numerical results
Author :
Padmanabhan, Sundaram ; Rothwarf, Allen
Author_Institution :
Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA
fDate :
11/1/1989 12:00:00 AM
Abstract :
Detailed calculations of the mobility in
Keywords :
elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; F-23/ dependence; Si; channel mobility; compressive stress; field dependence; gate oxide thicknesses; high fields; numerical results; quantum inversion layer mobility; quantum mechanical theory; stress dependence; temperature dependence; tensile-stressed material; transverse electric field; unstressed material; Compressive stress; Helium; Particle scattering; Phonons; Quantum mechanics; Rough surfaces; Surface roughness; Temperature dependence; Tensile stress; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
