• DocumentCode
    957414
  • Title

    Quantum inversion layer mobility: numerical results

  • Author

    Padmanabhan, Sundaram ; Rothwarf, Allen

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA
  • Volume
    36
  • Issue
    11
  • fYear
    1989
  • fDate
    11/1/1989 12:00:00 AM
  • Firstpage
    2557
  • Lastpage
    2566
  • Abstract
    Detailed calculations of the mobility in
  • Keywords
    elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; F-23/ dependence; Si; channel mobility; compressive stress; field dependence; gate oxide thicknesses; high fields; numerical results; quantum inversion layer mobility; quantum mechanical theory; stress dependence; temperature dependence; tensile-stressed material; transverse electric field; unstressed material; Compressive stress; Helium; Particle scattering; Phonons; Quantum mechanics; Rough surfaces; Surface roughness; Temperature dependence; Tensile stress; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.43680
  • Filename
    43680
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957414