The Admittance Behavior of Low-High-Low GaAs Schottky IMPATT Diodes

The admittance behavior of high-efficiency high-power low-high-low GaAs Schottky IMPATT diodes is significantly different than those of Si Read type IMPATT structures. Using small signal analysis the admittance of such low-high-low structures is investigated, and the influences of the multiplication factor, recombination current, and dielectric relaxation are included. The calculations obtained on the basis of the analysis support, in general, experimental behavior observed in such diodes. Specifically, it is observed that the order in which the cutoff and resonant frequencies occur, for such structured devices, are substantially different from those of silicon devices