DocumentCode :
957552
Title :
Erratum: Estimation of fringing capacitance of electrodes on s.i. GaAs substrate
Author :
Higashisaka, A. ; Hasegawa, Fumihiro
Volume :
16
Issue :
16
fYear :
1980
Firstpage :
644
Keywords :
III-V semiconductors; capacitance; gallium arsenide; substrates; electrodes; fringing capacitance; semi insulating GaAs;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19800454
Filename :
4244227
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=957552
