DocumentCode
957744
Title
Coherence of injection phase-locked AlGaAs semiconductor laser
Author
Kobayashi, S. ; Kimura, Tomohiro
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
16
Issue
17
fYear
1980
Firstpage
668
Lastpage
670
Abstract
Injection phase locking of an AlGaAs double heterostructure laser was studied with respect to visibility. The maximum value of visibility measured by interference experiment with the injecting wave was 0.87. Causes of the visibility degradation were attributed to the light from a heat sink plane and to spurious modes other than the locked central mode.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; light coherence; semiconductor junction lasers; visibility; AlGaAs DH lasers; III-V semiconductor; coherence; heat sink plane; injection phase locking; visibility;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800474
Filename
4244248
Link To Document