Title :
WNx diodes on plasma-treated GaAs surfaces
Author :
Paccagnella, A. ; Callegari, A. ; Braslau, N. ; Hovel, H. ; Murakami, M.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
11/1/1989 12:00:00 AM
Abstract :
The formation of WNx Schottky diodes on GaAs surfaces with various interface conditions was investigated by performing H2- and N2-plasma treatments on GaAs surfaces prior to the WNx film deposition. After annealing at 810 degrees C for 10 min, an improvement in the diode rectifying characteristics was generally observed, resulting from the thermal recovery of the sputtering and plasma-induced damage. The maximum Phi I-V=0.76 eV was obtained for the H2-plasma-treated diodes. Samples with an N2-plasma-treated interface showed a reduced barrier height and a higher ideality factor with corresponding nonlinearity in the C-V curves due to the presence of a high density of interfacial states.
Keywords :
III-V semiconductors; Schottky-barrier diodes; annealing; gallium arsenide; semiconductor technology; tungsten compounds; 0.76 eV; 10 min; 810 C; C-V curves; H2 plasma treatment; H2-plasma-treated diodes; N2 plasma treatment; N2-plasma-treated interface; WNx Schottky diodes; WNx-GaAs diodes; annealing; barrier height; diode rectifying characteristics; high density of interfacial states; ideality factor; interface conditions; plasma-induced damage; plasma-treated GaAs surfaces; sputtering induced damage; thermal recovery; Annealing; Capacitance-voltage characteristics; Gallium arsenide; Human computer interaction; MESFET integrated circuits; Plasma chemistry; Plasma properties; Schottky diodes; Sputtering; Substrates; Surface treatment;
Journal_Title :
Electron Devices, IEEE Transactions on
