Title :
2 W, 8¿12 GHz GaAs f.e.t. amplifier
Author :
Tserng, Hua-Quen ; Macksey, H.M. ; Nelson, S.R.
Author_Institution :
Texas Instruments Incorporated, Dallas, USA
Abstract :
Circuit topologies and performance results of a 2 W, 8¿12 GHz GaAs f.e.t. amplifier using a 4800 ¿m gate width f.e.t. are reported. Results of a 1 W, 6¿13 GHz amplifier are also described.
Keywords :
III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; network topology; power amplifiers; solid-state microwave circuits; 8 to 12 GHz; GaAs FET amplifier; III-V semiconductor; circuit topology; microwave amplifiers; power amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800483
