• DocumentCode
    957829
  • Title

    2 W, 8¿12 GHz GaAs f.e.t. amplifier

  • Author

    Tserng, Hua-Quen ; Macksey, H.M. ; Nelson, S.R.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, USA
  • Volume
    16
  • Issue
    17
  • fYear
    1980
  • Firstpage
    680
  • Lastpage
    681
  • Abstract
    Circuit topologies and performance results of a 2 W, 8¿12 GHz GaAs f.e.t. amplifier using a 4800 ¿m gate width f.e.t. are reported. Results of a 1 W, 6¿13 GHz amplifier are also described.
  • Keywords
    III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; network topology; power amplifiers; solid-state microwave circuits; 8 to 12 GHz; GaAs FET amplifier; III-V semiconductor; circuit topology; microwave amplifiers; power amplifiers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800483
  • Filename
    4244257
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957829