DocumentCode
957985
Title
A Review of Metrology for Nanoelectronics
Author
Galatsis, Kosmas ; Potok, Ron ; Wang, Kang L.
Author_Institution
California Univ., Los Angeles
Volume
20
Issue
4
fYear
2007
Firstpage
542
Lastpage
548
Abstract
This paper highlights some new and old techniques that will have important metrology inroads for nanoelectronics beyond CMOS. Traditional electron microscopy techniques are envisioned to remain and play a core role at the nanoscale level, and others such as probing techniques and special holographic imaging will further be enhanced and provide more diverse capabilities. The paper presents metrology techniques for beyond CMOS as presented at the First Metrology for Beyond CMOS workshop hosted by the Focus Center Research Program Center of Functional Engineered Nano Architectonics, the National Science Foundation Nanoscale Science and Engineering Center for Nanoprobing, and the California Institute of Technology (CNSI).
Keywords
integrated circuit measurement; nanoelectronics; CMOS; California Institute of Technology; Focus Center Research Program Center of Functional Engineered Nano Architectonics; National Science Foundation Nanoscale Science and Engineering Center for Nanoprobing; electron microscopy techniques; metrology techniques; nanoelectronics; probing techniques; special holographic imaging; CMOS technology; Carbon nanotubes; Industrial economics; MOSFET circuits; Metrology; Nanoelectronics; Power engineering and energy; Power generation economics; Threshold voltage; Voltage control;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2007.907631
Filename
4369336
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