DocumentCode :
957985
Title :
A Review of Metrology for Nanoelectronics
Author :
Galatsis, Kosmas ; Potok, Ron ; Wang, Kang L.
Author_Institution :
California Univ., Los Angeles
Volume :
20
Issue :
4
fYear :
2007
Firstpage :
542
Lastpage :
548
Abstract :
This paper highlights some new and old techniques that will have important metrology inroads for nanoelectronics beyond CMOS. Traditional electron microscopy techniques are envisioned to remain and play a core role at the nanoscale level, and others such as probing techniques and special holographic imaging will further be enhanced and provide more diverse capabilities. The paper presents metrology techniques for beyond CMOS as presented at the First Metrology for Beyond CMOS workshop hosted by the Focus Center Research Program Center of Functional Engineered Nano Architectonics, the National Science Foundation Nanoscale Science and Engineering Center for Nanoprobing, and the California Institute of Technology (CNSI).
Keywords :
integrated circuit measurement; nanoelectronics; CMOS; California Institute of Technology; Focus Center Research Program Center of Functional Engineered Nano Architectonics; National Science Foundation Nanoscale Science and Engineering Center for Nanoprobing; electron microscopy techniques; metrology techniques; nanoelectronics; probing techniques; special holographic imaging; CMOS technology; Carbon nanotubes; Industrial economics; MOSFET circuits; Metrology; Nanoelectronics; Power engineering and energy; Power generation economics; Threshold voltage; Voltage control;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2007.907631
Filename :
4369336
Link To Document :
بازگشت