Title :
Channelled substrate narrow stripe GaAs/(GaAl)As lasers with quarter-wavelength facet coatings
Author :
Plumb, R.G. ; Curtis, J.P.
Author_Institution :
Standard Telecommunication Laboratories Limited, Harlow, UK
Abstract :
Channelled substrate narrow stripe GaAs/(GaAl)As lasers with quarter-wavelength antireflection coatings are described. These devices have low thresholds, broad spectra, high external quantum efficiencies and operate up to 10 mW in the fundamental transverse mode.
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; semiconductor junction lasers; 10 mW; GaAs/(GaAl)As; channelled substrate narrow stripe lasers; quarter wavelength antireflection coatings; semiconductor junction lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800501
