Title :
High performance AlInAs/GaInAs HBTs for high speed, low power digital circuits
Author :
Farley, C.W. ; Chang, M.F. ; Asbeck, P.M. ; Wang, K.C. ; Sheng, N.H. ; Pierson, Richard ; Nubling, R.B.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
fDate :
11/1/1989 12:00:00 AM
Abstract :
Summary form only given. The authors describe high-performance single-heterojunction (SH) and double-heterostructure (DH) AlInAs/GaInAs HBTs (heterojunction bipolar transistors) for low-power digital circuits. They report record results in both DC and RF performance of AlInAs/GaInAs HBTs and circuits, including the highest unity current gain frequency, ft=78 GHz, reported for AlInAs/GaInAs HBTs, and a divide-by-four frequency divider operating up to a frequency of 17.1 GHz with a total power consumption of only 67 mW.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; semiconductor technology; 17.1 GHz; 67 mW; 78 GHz; AlInAs-GaInAs; DC performance; HBTs; RF performance; divide-by-four frequency divider; double-heterostructure; ft; heterojunction bipolar transistors; low-power digital circuits; power consumption; single-heterojunction; unity current gain frequency; Breakdown voltage; DH-HEMTs; Digital circuits; Energy consumption; Frequency conversion; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Performance gain; Radio frequency; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
