Title :
MBE-grown Ge/GaAs heterojunction bipolar transistors operated at 300 K and 77 K with current gain of 45
Author :
Kimura, Tomohiro ; Kawanaka, M. ; Sone, J.
Author_Institution :
NEC Corp., Kanagawa, Japan
fDate :
11/1/1989 12:00:00 AM
Abstract :
Summary form only given. The authors report the first fabrication of Ge/GaAs heterojunction bipolar transistors (HBTs) grown by molecular-beam epitaxy (MBE). Ge/GaAs HBTs have advantages of lower voltage operation, lower base resistance, and lower contact resistance over GaAs/AlGaAs HBTs, when applied to the high-speed digital circuits. Si-doped (n=1*1017 cm-3, 3000 A) emitter layer, nondoped (p=1*1019 cm-3, 1000 A) Ge base layer, and Sb-doped (n=3*1017 cm3, 5000 A) Ge collector layer are sequentially grown on GaAs
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor growth; semiconductor junctions; 1000 to 5000 A; 300 K; 77 K; I-V characteristics; MBE; MBE system with two growth chambers; current gain; fabrication; heterojunction bipolar transistors; high-speed digital circuits; ideality factor; low-power dissipation device; lower base resistance; lower contact resistance; lower voltage operation; molecular-beam epitaxy; room temperature; turn-on voltage; Bipolar transistors; Circuits; Contact resistance; Cutoff frequency; Digital circuits; Electrons; Energy consumption; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Microwave devices; Molecular beam epitaxial growth; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
