Interface state generation by negative gate-bias irradiation of MOS structures

Summary form only given. Irradiation of MOS structures under a negative gate-bias results in trapped positive charge at both the Al-SiO₂ and Si-SiO₂ interfaces. It is shown that the trapped charge at the Si-SiO₂ interface can be converted to interface states in a manner consistent with trapped hole models. This finding is significant because it appears to contradict other models which implicate H⁺ ions (in contrast to holes) as being primarily responsible for radiation-induced interface state generation. It is also demonstrated that trapped positive charge at the Al-SiO₂ interface can play a role in the interface state formation.