• DocumentCode
    958258
  • Title

    Single-mode operation of 500 Mbit/s modulated AlGaAs semiconductor laser by injection locking

  • Author

    Kobayashi, S. ; Yamada, J. ; Machida, Shimon ; Kimura, Tomohiro

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    16
  • Issue
    19
  • fYear
    1980
  • Firstpage
    746
  • Lastpage
    748
  • Abstract
    Single-mode operation of an AlGaAs double heterostructure semiconductor laser directly modulated at 500 Mbit/s data rate was realised by injection locking. The power ratio of central injected mode to total spectrum power was 94%.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical modulation; semiconductor junction lasers; AlGaAs double heterostructure semiconductor laser; central injected mode; injection locking; power ratio; single mode operation; spectrum power;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800530
  • Filename
    4244306