DocumentCode
958258
Title
Single-mode operation of 500 Mbit/s modulated AlGaAs semiconductor laser by injection locking
Author
Kobayashi, S. ; Yamada, J. ; Machida, Shimon ; Kimura, Tomohiro
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
16
Issue
19
fYear
1980
Firstpage
746
Lastpage
748
Abstract
Single-mode operation of an AlGaAs double heterostructure semiconductor laser directly modulated at 500 Mbit/s data rate was realised by injection locking. The power ratio of central injected mode to total spectrum power was 94%.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical modulation; semiconductor junction lasers; AlGaAs double heterostructure semiconductor laser; central injected mode; injection locking; power ratio; single mode operation; spectrum power;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800530
Filename
4244306
Link To Document