Title :
Unbiased InP detectors in the submillimetre wave region
Author :
Takada, Tatsuo ; Makimura, Tetsuya ; Ishibashi, Takayuki
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
High sensitivity unbiased detectors employing Ni-nInP Schottky-barrier diodes have been developed in a submillimetre-wave region. The voltage sensitivities of 120 V/W at 300 GHz and 17 V/W at 450 GHz were obtained, which are about three times higher than those of the usually used unbiased Si point contact diode detectors.
Keywords :
III-V semiconductors; Schottky-barrier diodes; indium compounds; microwave detectors; 300 GHz; 450 GHz; Schottky barrier diode; infrared detector; submillimetre wave region; unbiased InP detector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800543
