Title :
Band-to-band tunnelling current in Ga0.47 In0.53 As p-n junctions
Author_Institution :
Thomson-CSF, LCR, Orsay, France
Abstract :
The tunnelling current in Ga0.47In0.53As p-n junctions from Zener tunnelling is calculated from the Kane model with no adjustable parameters. This calculation indicates that band-to-band tunnelling becomes an important contribution to the reverse current near breakdown (JR = 10¿1 Acm¿2) in abrupt p-n junctions for |ND¿NA|>6 × 1015 cm¿3. Experimental measurements show, however, that band-to-band tunnelling becomes the dominant contribution to the dark current near breakdown for |ND¿NA|>4 × 1016 cm¿3.
Keywords :
III-V semiconductors; Zener effect; gallium arsenide; indium compounds; p-n homojunctions; tunnelling; Ga0.47In0.53As; Kane model; Zener tunnelling; band to band tunnelling; p-n junctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800547
