• DocumentCode
    958431
  • Title

    Band-to-band tunnelling current in Ga0.47 In0.53 As p-n junctions

  • Author

    Pearsall, T.P.

  • Author_Institution
    Thomson-CSF, LCR, Orsay, France
  • Volume
    16
  • Issue
    20
  • fYear
    1980
  • Firstpage
    771
  • Lastpage
    773
  • Abstract
    The tunnelling current in Ga0.47In0.53As p-n junctions from Zener tunnelling is calculated from the Kane model with no adjustable parameters. This calculation indicates that band-to-band tunnelling becomes an important contribution to the reverse current near breakdown (JR = 10¿1 Acm¿2) in abrupt p-n junctions for |ND¿NA|>6 × 1015 cm¿3. Experimental measurements show, however, that band-to-band tunnelling becomes the dominant contribution to the dark current near breakdown for |ND¿NA|>4 × 1016 cm¿3.
  • Keywords
    III-V semiconductors; Zener effect; gallium arsenide; indium compounds; p-n homojunctions; tunnelling; Ga0.47In0.53As; Kane model; Zener tunnelling; band to band tunnelling; p-n junctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800547
  • Filename
    4244324
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=958431