Title :
Deep level defects in Au/ZnSe Schottky diodes
Author :
Besomi, P. ; Wessels, B.W.
Author_Institution :
Northwestern University, Department of Materials Science & Engineering & Materials Research Center, Evanston, USA
Abstract :
Properties of deep level defects in heteroepitaxially grown ZnSe have been investigated using transient capacitance spectroscopy. A total of five electron traps were observed with activation energies of 0.33, 0.35, 0.42, 0.71 and 0.86 eV in Au/ZnSe Schottky diodes. Trap concentrations ranged from 1012 to 1014 cm¿3.
Keywords :
Schottky-barrier diodes; deep levels; electron traps; gold; zinc compounds; Au/ZnSe Schottky diodes; deep level defects; electron traps; heteroepitaxially grown; transient capacitance spectroscopy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800565
