Title :
A linear dependence of Fmin on frequency for TET´s
Author_Institution :
Hewlett-Packard Microwave Technol. Div., Santa Rosa, CA, USA
Abstract :
The minimum noise figure of a FET, expressed in decibels, is shown to increase approximately linearly with frequency to frequencies approaching the FET´s fmax. This observation is useful for extrapolating noise figures and provides a simple frequency-of-merit
Keywords :
equivalent circuits; field effect transistors; semiconductor device models; semiconductor device noise; FET; figure-of-merit; frequency dependence; frequency-of-merit; linear dependence; minimum noise figure; Circuit noise; Equivalent circuits; Frequency dependence; HEMTs; Linear approximation; MODFETs; Microwave FETs; Microwave technology; Resistors; Temperature dependence;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
