• DocumentCode
    958696
  • Title

    Frequency-dependent FDTD modeling of optically controlled dielectric resonators

  • Author

    Shen, Ying ; Nickerson, Kent ; Litva, John

  • Author_Institution
    Commun. Res. Lab., McMaster Univ., Hamilton, Ont., Canada
  • Volume
    41
  • Issue
    6
  • fYear
    1993
  • Firstpage
    1005
  • Lastpage
    1010
  • Abstract
    A theoretical analysis is carried out to describe the performance of optically controlled dielectric resonators. A previously developed frequency-dependent finite-difference-time domain (FDTD) formulation has been used to estimate the effect that solid state plasmas have on the resonant frequency on dielectric resonators. Optical generation of plasmas in contact with dielectric resonators is being considered here as a possible means of controlling the resonator´s frequency. The effect that carrier diffusion and recombination-generation have on plasma permittivity and penetration depth are taken into account in this analysis. The results are compared with measurement and are shown to yield a quantitative estimate of the optically induced dielectric resonator frequency shift as a function of the illumination, properties of the plasma host semiconductor, and the properties of the dielectric resonator
  • Keywords
    carrier lifetime; dielectric resonators; electron-hole recombination; finite difference time-domain analysis; modelling; permittivity; semiconductor-insulator boundaries; solid-state plasma; tuning; FDTD modeling; carrier diffusion; finite-difference-time domain; frequency dependent modelling; frequency shift; optically controlled dielectric resonators; penetration depth; plasma host semiconductor; plasma permittivity; recombination-generation; resonant frequency; semiconductor-insulator interface; skin depth; solid state plasmas; Dielectrics; Finite difference methods; Frequency estimation; Optical control; Optical resonators; Performance analysis; Plasma measurements; Plasma properties; Resonant frequency; Time domain analysis;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.238516
  • Filename
    238516