Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Author

Cardoso, Adilson S. ; Chakraborty, Partha S. ; Karaulac, Nedeljko ; Fleischhauer, David M. ; Lourenco, Nelson E. ; Fleetwood, Zachary E. ; Omprakash, Anup P. ; England, Troy D. ; Jung, Sanghyuk ; Najafizadeh, Laleh ; Roche, Nicholas J.-H ; Khachatrian, An

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

3210

Lastpage

3217

Abstract

This paper presents an investigation of the impact of single-event transients (SETs) and total ionization dose (TID) on precision voltage reference circuits designed in a fourth-generation, 90-nm SiGe BiCMOS technology. A first-order uncompensated bandgap reference (BGR) circuit is used to benchmark the SET and TID responses of these voltage reference circuits (VRCs). Based on the first-order BGR radiation response, new circuit-level radiation-hardening-by-design (RHBD) techniques are proposed. An RHBD technique using inverse-mode (IM) transistors is demonstrated in a BGR circuit. In addition, a PIN diode VRC is presented as a potential SET and TID tolerant, circuit-level RHBD alternative.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; energy gap; integrated circuit design; p-i-n diodes; radiation hardening (electronics); reference circuits; transistor circuits; BGR circuit; PIN diode VRC; RHBD techniques; SET; SiGe; SiGe BiCMOS technology; TID responses; bandgap reference circuit; circuit-level radiation-hardening-by-design techniques; inverse-mode transistors; single-event transient; size 90 nm; total dose response; total ionization dose; voltage reference circuits; BiCMOS integrated circuits; Heterojunction bipolar transistors; PIN photodiodes; Radiation effects; Radiation hardening (electronics); Silicon germanium; Single event transients; Temperature measurement; Transient response; Bandgap reference (BGR); PIN diode; SiGe heterojunction bipolar transistors (HBTs); biCMOS circuits; precision voltage reference; radiation; radiation hardening by design; single-event transient (SET); total ionizing dose (TID); transient radiation effects; transient response;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2358078

Filename

6935017