Title :
100 dpi 4-a-Si:H TFTs active-matrix organic polymer light-emitting display
Author :
Hong, Yongtaek ; Nahm, Jeong-Yeop ; Kanicki, Jerzy
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
In this paper, we report on 100 dpi four hydrogenated amorphous silicon thin-film transistors (4-a-Si:H TFTs) active-matrix organic polymer light-emitting display (AM-PLED). For this display, we have established the operational limitation of our 4-a-Si:H TFTs pixel electrode circuit by performing a load line analysis. Combining this result with the extracted pixel organic polymer light-emitting device (PLED) characteristics, we have found that the change of the AM-PLED pixel operating point, especially of a driving TFT, limits the operational range of AM-PLED pixel. The predicted results are compared with the measured data of 100 dpi monochromatic red light-emitting 4-a-Si:H TFTs AM-PLED. For our AM-PLED, we obtained luminance up to ∼20 cd/m2 and Commission Internationale de l´Eclairage color coordinates of (0.67, 0.33), which are calculated from the measured AM-PLED electroluminescence spectrum.
Keywords :
LED displays; amorphous semiconductors; brightness; conducting polymers; electroluminescence; elemental semiconductors; hydrogen; optical polymers; organic light emitting diodes; silicon; thin film circuits; thin film transistors; 4-a-S:H TFT; Commission Internationale de l´Eclairage color coordinates; Si:H; active matrix organic polymer light-emitting display; current bias-temperature stress; electroluminescence; four hydrogenated amorphous silicon thin film transistors; load line analysis; luminance; pixel electrode circuit; pixel organic polymer light-emitting device; Active matrix technology; Amorphous silicon; Circuits; Coordinate measuring machines; Data mining; Displays; Electrodes; Performance analysis; Polymers; Thin film transistors;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2004.824075
