Title :
Modeling of transverse propagation delays in the GaAs/AlGaAs modulation doped heterojunction field effect transistors
Author :
Goel, Ashok K. ; Xu, Wei
Author_Institution :
Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA
Abstract :
A computer-efficient algorithm to calculate the transverse propagation delays in a GaAs/AlGaAs modulation-doped FET (MODFET) is discussed. The model includes the intrinsic as well as the extrinsic parameters of the MODFET. The dependences of these delays on the various MODFET parameters such as its gate length and width and the gate metal resistivity have been studied
Keywords :
III-V semiconductors; aluminium compounds; delays; gallium arsenide; high electron mobility transistors; semiconductor device models; GaAs-AlGaAs; MODFET; extrinsic parameters; gate length; gate metal resistivity; gate width; intrinsic parameters; modulation doped heterojunction field effect transistors; transverse propagation delays; Capacitance; Conductivity; Electrodes; Epitaxial layers; Gallium arsenide; HEMTs; Heterojunctions; MODFET circuits; Propagation delay; Propagation losses;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
