High-performance ion-implanted MES-FET on InP using enhanced barrier self-aligned Schottky gate

Author

Chakrabarti, U.K. ; Seabury, C.W. ; Dutta, N.K. ; Vella-Coleiro, G.P.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

36

Issue

11

fYear

1989

fDate

11/1/1989 12:00:00 AM

Firstpage

2610

Lastpage

2611

Abstract

Summary form only given. An enhanced barrier Schottky diode with a barrier height of 0.78 eV and an ideality factor of 1.04 was fabricated by chemically modifying the surface of InP without the aid of a dielectric layer. This process involves the solution treatment of the InP surface. The presence of ruthenium on the surface was determined by X-ray photoelectron spectroscopy. This process is reproducible and stable with respect to time. The authors discuss results on MIS capacitors fabricated simultaneously with and without this surface treatment.

Keywords

III-V semiconductors; Schottky gate field effect transistors; indium compounds; ion implantation; III-V semiconductors; InP; MIS capacitors; Ru; X-ray photoelectron spectroscopy; enhanced barrier; self-aligned Schottky gate; solution treatment; surface chemical modification; Atomic layer deposition; Capacitors; Chemicals; Dielectrics; FETs; Fabrication; Implants; Indium phosphide; Leakage current; MESFETs; Schottky diodes; Spectroscopy; Surface treatment; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43718

Filename

43718