Title :
Room-temperature operation of a GaAs/AlGaAs superlattice self-electrooptic-effect device
Author :
Kuo, J.M. ; Kopf, R.F. ; Bar-Joseph, I. ; Goossen, K.W. ; Miller, David A. B. ; Chemla
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
11/1/1989 12:00:00 AM
Abstract :
Summary form only given. The authors report the room-temperature operation of a blue-shift SEED (self-electrooptic-effect device) using Wannier-Stark localization in a GaAs/Al0.3Ga0.7As superlattice. They demonstrate that large modulation can be obtained over a wide spectral range and bias with contrast comparable to MQW (multiple quantum-well) SEEDs. Wannier-Stark localization associated with a blue shift of the superlattice (SL) absorption edge was clearly observed in the photocurrent measurements. Bistability of the SL SEED was obtained over a wide spectral range and was almost constant between 745 and 755 nm. The demonstration of large modulation bandwidth and optical switching behavior of the SL SEED makes this device an excellent candidate for optical signal processing and optical computing.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical bistability; optical information processing; optical logic; optical modulation; semiconductor superlattices; 745 to 755 nm; GaAs-Al0.3Ga0.7As superlattice; III-V semiconductors; Wannier-Stark localization; bistability; blue-shift; large modulation bandwidth; optical computing; optical signal processing; optical switching behavior; room-temperature operation; self-electrooptic-effect device; wide spectral range; Absorption; Bandwidth; Gallium arsenide; Optical bistability; Optical devices; Optical modulation; Optical signal processing; Photoconductivity; Quantum well devices; Superlattices;
Journal_Title :
Electron Devices, IEEE Transactions on
