A planar resonant-tunneling field-effect transistor

Author

Ismail, K. ; Antoniadis, Dimitri A. ; Smith, Henry I

Author_Institution

MIT, Cambridge, MA, USA

Volume

36

Issue

11

fYear

1989

fDate

11/1/1989 12:00:00 AM

Firstpage

2617

Abstract

Summary form only given. The authors report on the fabrication of double-barrier planar resonant-tunneling field-effect transistors. The layers used are modulation-doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. The devices can be operated in a regular FET mode by lowering the gate-induced barriers below the Fermi energy. A clear oscillatory behavior of the source-drain current I_DS as a function of gate bias V_GS below threshold can be observed at 4.2 K, with both gates connected together, a manifestation of resonant tunneling.

Keywords

III-V semiconductors; aluminium compounds; current fluctuations; field effect transistors; gallium arsenide; tunnelling; 4.2 K; GaAs-AlGaAs modulation doped heterostructures; double barrier transistors; gate bias; gate-induced barriers; molecular beam epitaxy; oscillatory behavior; planar resonant-tunneling field-effect transistor; regular FET mode; source-drain current; triple barrier transistors; Epitaxial growth; Epitaxial layers; FETs; Fabrication; Gallium arsenide; Molecular beam epitaxial growth; Resonant tunneling devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43732

Filename

43732