Title :
New logic functional device using transverse spreading of a high-field domain in n type GaAs
Author :
Tomizawa, Keiichi ; Kawashima, Mitsumasa ; Kataoka, S.
Author_Institution :
Ministry of International Trade & Industry, Electrotechnical Laboratory, Tokyo, Japan
Abstract :
New functional devices making use of the transverse spreading of a high-field domain in an H shaped n type GaAs sample are proposed, with some experimental results. It is expected that such devices will perform complex logic operations, such as a modification of Sheffer´s stroke at extremely high speed.
Keywords :
III-V semiconductors; domains; gallium arsenide; logic circuits; logic devices; semiconductor materials; AND; Ag; Au-Ge; BaTiO3; OR; Sheffer stroke; high field domain; logic functional device; n-GaAs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710162
