Title :
Improved method for calculation of net impurity-doping profile of double-diffused transistors
Author_Institution :
Centre d´´Ã\x89tudes de B III (Service L), Montrouge, France
Abstract :
A computational technique is described, the purpose of which is to obtain an effective doping profile for double-diffused transistors, using current manufacturers data as starting parameters. The guiding principle in this method is to obtain a doping profile with a calculated base region in full agreement with junction-depth measurements.
Keywords :
bipolar transistors; semiconductor doping; double diffused transistors; impurity doping profile; junction depth measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710165
