• DocumentCode
    959433
  • Title

    Experimental verification of bistable switching with Gunn diodes

  • Author

    Thim, H.

  • Author_Institution
    Fraunhofer Gesellschaft, Institut fÿr Angewandte Festkörperphysik, Freiburg, West Germany
  • Volume
    7
  • Issue
    10
  • fYear
    1971
  • Firstpage
    246
  • Lastpage
    247
  • Abstract
    It has been demonstrated experimentally that high-quality Gunn diodes exhibit switching between two stable states. One of them is the ohmic state below threshold. The other one is a low-current high-voltage state and is associated with a stationary high-field layer at the anode.
  • Keywords
    Gunn diodes; semiconductor switches; GaAs; Gunn diodes; InP; bistable switching; high field domain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710167
  • Filename
    4244432
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=959433