Title :
A novel analog-to-digital conversion architecture using electron waveguides
Author :
Eugster, Cristopher C. ; Nuytkens, Peter R. ; Del Alamo, Jesus A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
An analog-to-digital (A/D) conversion architecture based on the quantized conductance of electron waveguides has been demonstrated. In the scheme, a dual electron waveguide (DWG) device implements a binary quantizer and encoder for one significant bit of resolution. The conductance values of the one and off states in the binary code are 2e2/h and zero, respectively. By cascading multiple DWG devices, higher order significant bits can be attained. Here the first significant bit and the second significant bit of the analog-to-digital conversion architecture using a DWG device fabricated in an AlGaAs/GaAs modulation-doped heterostructure are shown
Keywords :
III-V semiconductors; aluminium compounds; analogue-digital conversion; gallium arsenide; quantum interference devices; two-dimensional electron gas; 1.6 K; 2DEG mobility; AlGaAs-GaAs modulation doped heterostructure; DWG device; analog-to-digital conversion architecture; binary code; binary quantizer; cascaded architecture; electron waveguides; encoder; first significant bit; quantized conductance; second significant bit; Analog-digital conversion; Binary codes; Circuits; Conducting materials; Electric variables; Electrons; Epitaxial layers; Gallium arsenide; Scattering; Split gate flash memory cells;
Journal_Title :
Electron Devices, IEEE Transactions on
