A novel analog-to-digital conversion architecture using electron waveguides

Author

Eugster, Cristopher C. ; Nuytkens, Peter R. ; Del Alamo, Jesus A.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

1910

Lastpage

1916

Abstract

An analog-to-digital (A/D) conversion architecture based on the quantized conductance of electron waveguides has been demonstrated. In the scheme, a dual electron waveguide (DWG) device implements a binary quantizer and encoder for one significant bit of resolution. The conductance values of the one and off states in the binary code are 2e²/h and zero, respectively. By cascading multiple DWG devices, higher order significant bits can be attained. Here the first significant bit and the second significant bit of the analog-to-digital conversion architecture using a DWG device fabricated in an AlGaAs/GaAs modulation-doped heterostructure are shown

Keywords

III-V semiconductors; aluminium compounds; analogue-digital conversion; gallium arsenide; quantum interference devices; two-dimensional electron gas; 1.6 K; 2DEG mobility; AlGaAs-GaAs modulation doped heterostructure; DWG device; analog-to-digital conversion architecture; binary code; binary quantizer; cascaded architecture; electron waveguides; encoder; first significant bit; quantized conductance; second significant bit; Analog-digital conversion; Binary codes; Circuits; Conducting materials; Electric variables; Electrons; Epitaxial layers; Gallium arsenide; Scattering; Split gate flash memory cells;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239728

Filename

239728