DocumentCode
959620
Title
Forward transit delay in In0.53Ga0.47As heterojunction bipolar transistors with nonequilibrium electron transport
Author
Laskar, Joy ; Nottenburg, Richard N. ; Baquedano, J.A. ; Levi, Anthony F J ; Kolodzey, James
Author_Institution
Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
Volume
40
Issue
11
fYear
1993
fDate
11/1/1993 12:00:00 AM
Firstpage
1942
Lastpage
1949
Abstract
The authors measured the microwave performance of high speed InP/In0.53Ga0.47As heterojunction bipolar transistors in the temperature range 55 K⩽T ⩽340 K. The extrinsic unity current gain cutoff frequency is 130 GHz at 340 K, increasing to 300 GHz at 55 K. The intrinsic emitter-collector forward delay decreases with decreasing temperature from 0.5 ps at 340 K to a saturated value of 0.28 ps for ⩽150 K. Such behavior may be explained only by the presence of nonequilibrium electron transport in the base and collector of the device
Keywords
III-V semiconductors; S-parameters; delays; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 0.28 to 0.5 ps; 130 to 300 GHz; 55 to 340 K; InP-In0.53Ga0.47As; S-parameters; extrinsic unity current gain cutoff frequency; heterojunction bipolar transistors; high speed HBT; intrinsic emitter-collector forward delay; microwave performance; nonequilibrium electron transport; Current measurement; Delay; Frequency measurement; Gain measurement; Heterojunction bipolar transistors; Indium phosphide; Microwave measurements; Performance gain; Temperature distribution; Velocity measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.239732
Filename
239732
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