Title :
Long wavelength infrared 128×128 AlxGa1-x As/GaAs quantum well infrared camera and imaging system
Author :
Bethea, C.G. ; Levine, B.F. ; Asom, M.T. ; Leibenguth, R.E. ; Stayt, J.W. ; Glogovsky, K.G. ; Morgan, R.A. ; Blackwell, J.D. ; Parrish, W.J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
The authors discuss the development of a long-wavelength (8-14-μm) 128×128 AlxGa1-xAs/GaAs multiquantum well infrared (MQW IR) imaging system. Highly uniform, high-yield GaAs focal plane arrays, incorporating an integral grating structure for efficient optical coupling, were hybridized to CMOS multiplexers. Excellent imagery, with low noise, a noise equivalent differential temperature (NEΔT) of less than 10 mK, and a high image contrast signal-to-noise ratio, has been achieved. It is shown that figures of merit concerning array uniformity, such as yield, NEΔT, and maximum deliverable charge to the CMOS multiplexer are much more relevant variables that affect image quality than D*
Keywords :
CMOS integrated circuits; III-V semiconductors; aluminium compounds; cameras; gallium arsenide; image sensors; infrared detectors; infrared imaging; semiconductor quantum wells; 128 pixel; 16384 pixel; 8 to 14 micron; AlxGa1-xAs-GaAs; CMOS multiplexers; LWIR photodetectors; MQW IR imaging; array uniformity; figures of merit; high-yield GaAs focal plane arrays; image contrast signal-to-noise ratio; integral grating structure; maximum deliverable charge; noise equivalent differential temperature; optical coupling; quantum well infrared camera; yield; Gallium arsenide; Gratings; Infrared imaging; Multiplexing; Optical arrays; Optical coupling; Optical imaging; Optical noise; Quantum well devices; Signal to noise ratio;
Journal_Title :
Electron Devices, IEEE Transactions on
