Title :
A generalized integral charge-control relation and its application to compact models for silicon-based HBT´s
Author :
Schröter, Michael ; Friedrich, Martin ; Rein, Hans-Martin
Author_Institution :
Ruhr Univ., Bochum, Germany
fDate :
11/1/1993 12:00:00 AM
Abstract :
A generalized version of Gummel´s integral charge-control relation (ICCR) is derived, which-in contrast to the classical ICCR-is valid also for HBTs. As a drawback of this generalized ICCR (GICCR) the required separation of the total minority charge into the contributions of the different transistor regions is not possible by measurements. Therefore, a simplified version of the GICCR is presented the parameters of which can be determined experimentally in a simple manner for the operating range of interest. This approach could provide a powerful basis for the development of compact HBT models for circuit simulation. The validity of the different approaches is verified by one- and two-dimensional device simulation for several practical SiGe-base HBTs with different doping profiles and Ge mole fractions
Keywords :
Ge-Si alloys; current density; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; solid-state microwave devices; 1D device simulation; Ge mole fractions; HBTs; SiGe; circuit simulation; collector current density; compact models; doping profiles; generalized integral charge-control relation; microwave frequency; total minority charge; two-dimensional device simulation; Charge measurement; Circuit simulation; Current density; Current measurement; Doping profiles; Frequency; Heterojunction bipolar transistors; Semiconductor process modeling; Silicon carbide; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
