A low-frequency noise study of gate-all-around SOI transistors

Author

Simoen, E. ; Magnusson, Ulf ; Claeys, Cor

Author_Institution

IMEC, Leuven, Belgium

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2054

Lastpage

2059

Abstract

The low-frequency noise characteristics of both n- and p-type gate-all-around (GAA) SOI MOS transistors are reported and compared with the noise behavior of conventional, partially depleted (PD) SOI transistors. It is shown that the input-referred noise of n-channel GAA transistors is considerably lower than for standard ones, which is related to the higher device transconductance, coupled to the occurrence of volume inversion, P-channel devices have a one order of magnitude lower noise spectral density than n-MOSTs, which is due to the corresponding lower density of interface traps. GAA p-MOSTs tend to have a lower average noise in weak inversion than their standard-SOI counterparts. In strong inversion, the reverse situation is often found. Finally, it is shown that in n-type GAA transistors no kink-related excess noise is observed, which is an additional benefit for using this type of SOI technology

Keywords

SIMOX; insulated gate field effect transistors; interface electron states; random noise; semiconductor device noise; SIMOX substrate; SOI MOS transistors; gate-all-around SOI transistors; input-referred noise; interface traps; low-frequency noise; n-channel transistors; noise spectral density; p-channel transistors; strong inversion; transconductance; volume inversion; weak inversion; CMOS technology; Degradation; Helium; Hot carriers; Low-frequency noise; MOSFETs; Silicon on insulator technology; Thin film devices; Thin film transistors; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239748

Filename

239748