Title :
Hooge fluctuation parameter of semiconductor microstructures
Author :
Tacano, Munecazu
Author_Institution :
Kyocera Corp., Kyoto, Japan
fDate :
11/1/1993 12:00:00 AM
Abstract :
The Hooge 1/f fluctuation parameter αH of a mesoscopic n-GaAs filament is studied experimentally and compared with that derived from the quantum model. The minimum value of the Hooge parameter αH was 2×10-6 and 1×10 -8 at room temperature and 60 K, respectively. The temperature dependence of αH below 100 K and the electric field dependence at 77 K are favorably compared with those obtained for the impurity scattering fluctuation of the quantum 1/f noise theory
Keywords :
Hall effect devices; III-V semiconductors; gallium arsenide; mesoscopic systems; random noise; semiconductor device models; semiconductor device noise; semiconductor quantum wires; 0.25 micron; 1/f fluctuation parameter; 77 to 300 K; GaAs; Greek cross Hall device; Hooge fluctuation parameter; electric field dependence; impurity scattering fluctuation; mesoscopic n-GaAs filament; quantum 1/f noise theory; quantum model; semiconductor microstructures; temperature dependence; Fluctuations; Gallium arsenide; Impurities; Microstructure; Numerical analysis; Particle scattering; Scattering parameters; Semiconductor device noise; Signal processing; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
